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Non-Volatile 3D DRAM integrates 3D NOR flash cell array along with 3D DRAM in a single chip with bit-per-bit mirroring
PORTLAND, OR, November 30, 2020 /24-7PressRelease/ -- BeSang Inc., a pioneer in monolithic 3D IC technologies in Portland, Oregon, announces "Non-Volatile 3D DRAM," a disruptive 3D DRAM technology which integrates 3D NOR flash cell array along with 3D DRAM in a single chip with bit-per-bit mirroring. Unlike conventional volatile DRAM, Non-Volatile 3D DRAM does not lose data even without a power supply and returns to its original state within just 100ns read latency once power is provided. Therefore, it serves as a rapid main memory, as 100ns read latency of integrated NOR is more than 1,000 times faster than a traditional SSD.
Non-Volatile 3D DRAM enables instant booting of computers and access to their paused work immediately. Non-Volatile 3D DRAM does not change speed, performance, nor power consumption during normal operation.
"We don't need to sleep or suspend our computers if they are equipped with Non-Volatile 3D DRAM," states Sang-Yun Lee, CEO of BeSang Inc. "If operating system is stored in the integrated NOR cells, no booting up from storage devices is required. Non-Volatile 3D DRAM will change the fundamentals of our working behavior in many personal and industrial computer applications with enhanced speed, fortified stability, and convenience."
"Non-Volatile 3D DRAM" is now available through IP licensing from BeSang Inc. Visit BeSang.com for more information.
BeSang is a fabless semiconductor company developing high-density and ultra-low cost semiconductor memory products and technologies along with IP development. The BeSang is headquartered in Hillsboro, Oregon, USA. Additional information is available at www.besang.com.
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